SCR Turn ON Methods or SCR Triggering Methods
An SCR or thyristor can be turned ON by switching it from the forward blocking mode to forward conduction mode with the following methods
Power Semiconductor Devices
Comparison Between SCR, BJT, MOSFET & IGBT
An SCR is a controlled rectifier made up of p-type and n-type semiconductor material belonging to the thyristor family. It consists of three terminals anode, cathode, and gate, and works similar to a diode when a pulse is applied to the gate terminal.
Characteristics of IGBT – V-I & Switching Characteristics
The insulated gate bipolar transistor (IGBT) is a semiconductor device developed with combined characteristics of MOSFET and BJT. It has emitter-collector characteristics as BJT and control features of MOSFET.
Difference Between IGBT and MOSFET – IGBT vs MOSFET
An IGBT is a new development in power semiconductor devices that possess the advantages of both MOSFET and BJT. A MOSFET is a unipolar three/four-terminal voltage-controlled device.
Types of IGBT – Punch Through & Non-Punch Through IGBTs
An insulated gate bipolar transistor (IGBT) is a semiconductor structure of alternate layers of p-type and n-type doping. With the combination of an easily driven MOS gate and low conduction loss,
IGBT – Construction, Working, Advantages & Applications
IGBT standards for Insulated Gate Bipolar Transistor. It is another development in the power electronics field also called COMFET (conductivity modulated field-effect transistor), IGT (insulated gate transistor), GEMFET, or bipolar MOSFET. IGBT combines the properties of BJT (bipolar junction transistor)
Difference Between GTO and SCR
GTO is another type of thyristor similar to SCR for which the gate has full control (both turning OFF and turning ON) over the operation of GTO.